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| MAC12HCD, MAC12HCM, MAC12HCN Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full-wave, silicon gate-controlled devices are needed. * Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 * High Commutating di/dt and High Immunity to dv/dt @ 125C * Minimizes Snubber Networks for Protection * Blocking Voltage to 800 Volts * On-State Current Rating of 12 Amperes RMS at 80C * High Surge Current Capability - 100 Amperes * Industry Standard TO-220AB Package for Ease of Design * Glass Passivated Junctions for Reliability and Uniformity * Device Marking: Logo, Device Type, e.g., MAC12HCD, Date Code http://onsemi.com TRIACS 12 AMPERES RMS 400 thru 800 VOLTS MT2 G MT1 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage(1) (TJ = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12HCD MAC12HCM MAC12HCN On-State RMS Current (All Conduction Angles; TC = 80C) Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.33 ms) Peak Gate Power (Pulse Width 1.0 s, TC = 80C) Average Gate Power (t = 8.3 ms, TC = 80C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg 12 100 41 16 0.35 -40 to +125 -40 to +150 A A A2sec 1 Watts Watts C 2 3 4 TO-220AB CASE 221A STYLE 4 Value Unit Volts 4 1 2 3 PIN ASSIGNMENT Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 ORDERING INFORMATION C Device MAC12HCD MAC12HCM MAC12HCN Package TO220AB TO220AB TO220AB Shipping 50 Units/Rail 50 Units/Rail 50 Units/Rail (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2001 1 November, 2001 - Rev. 2 Publication Order Number: MAC12HC/D MAC12HCD, MAC12HCM, MAC12HCN THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC RJA TL Value 2.2 62.5 260 C Unit C/W ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM, Gate Open) TJ = 25C TJ = 125C IDRM, IRRM mA -- -- -- -- 0.01 2.0 ON CHARACTERISTICS Peak On-State Voltage(1) (ITM = 17 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Holding Current (VD = 12 V, Gate Open, Initiating Current = 150 mA) Latch Current (VD = 12 V, IG = 50 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) VTM -- IGT 10 10 10 IH -- IL -- -- -- VGT 0.5 0.5 0.5 -- -- -- 1.5 1.5 1.5 -- -- -- 60 80 60 V -- 60 mA -- -- -- 50 50 50 mA -- 1.85 mA V DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/s, Gate Open, TJ = 125C, f = 250 Hz, CL = 10 F, LL = 40 mH, with Snubber) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 40 sec; diG/dt = 200 mA/sec; f = 60 Hz (1) Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. (di/dt)c 15 -- -- A/ms dv/dt 600 -- -- V/s di/dt -- -- 10 A/s http://onsemi.com 2 MAC12HCD, MAC12HCM, MAC12HCN Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 - IH VTM IRRM at VRRM on state IH VTM off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT - (-) MT2 (-) MT2 + IGT Quadrant III (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV - MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 MAC12HCD, MAC12HCM, MAC12HCN 100 VGT, GATE TRIGGER VOLTAGE (VOLT) IGT, GATE TRIGGER CURRENT (mA) Q3 Q2 Q1 10 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0.50 0.40 -40 -25 -10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (C) 95 110 125 Q1 Q2 Q3 1 -40 -25 -10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (C) 110 125 Figure 1. Typical Gate Trigger Current versus Junction Temperature 100 MT2 NEGATIVE HOLDING CURRENT (mA) LATCHING CURRENT (mA) 100 Figure 2. Typical Gate Trigger Voltage versus Junction Temperature Q2 Q3 Q1 10 MT2 POSITIVE 10 1 -40 -25 -10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (C) 110 125 1 -40 -25 -10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (C) 95 110 125 Figure 3. Typical Holding Current versus Junction Temperature P(AV), AVERAGE POWER DISSIPATION (WATTS) 125 TC, CASE TEMPERATURE (C) 120, 90, 60, 30 20 18 16 14 12 10 8 6 4 2 0 0 Figure 4. Typical Latching Current versus Junction Temperature DC 180 120 110 95 180 80 DC 65 0 2 4 6 8 10 IT(RMS), RMS ON STATE CURRENT (AMP) 12 60 30 90 2 4 6 8 10 IT(AV), AVERAGE ON STATE CURRENT (AMP) 12 Figure 5. Typical RMS Current Derating Figure 6. On-State Power Dissipation http://onsemi.com 4 MAC12HCD, MAC12HCM, MAC12HCN r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 100 I T, INSTANTANEOUS ON STATE CURRENT (AMP) TYPICAL @ TJ = 25C 1 MAXIMUM @ TJ = 125C 10 0.1 1 MAXIMUM @ TJ = 25C 0.01 0.1 1 10 100 t, TIME (ms) 1000 10000 Figure 8. Typical Thermal Response 0.1 0 4 4.5 0.5 1 1.5 2 2.5 3 3.5 VT, INSTANTANEOUS ON STATE VOLTAGE (VOLTS) 5 Figure 7. Typical On-State Characteristics http://onsemi.com 5 MAC12HCD, MAC12HCM, MAC12HCN PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 Q 123 A U K H Z L V G D N R J STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 http://onsemi.com 6 MAC12HCD, MAC12HCM, MAC12HCN Notes http://onsemi.com 7 MAC12HCD, MAC12HCM, MAC12HCN ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MAC12HC/D |
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